Power Cycle Test Bench for Accelerated Life Testing of 10 kV SiC MOSFETs
Authors
Christensen, Nicklas ; Dalal, Dipen Narendrabhai
Term
4. term
Education
Publication year
2016
Submitted on
2016-05-31
Pages
122
Abstract
Mellemspændings MOSFET’er i siliciumkarbid (SiC) nærmer sig den modenhed, der kræves for praktisk brug, og kan blive et alternativ til siliciumbaserede IGBT’er. Da fremstillingsprocessen for SiC adskiller sig fra silicium, og der er begrænset erfaring med pålidelighed i faktiske applikationer, er det nødvendigt at undersøge defektvækst og fejlmekanismer under realistiske forhold. Derfor er der bygget en mellemspændings testbænk til power-cycling (gentagne opvarmnings- og afkølingscykler), som udsætter SiC-moduler for temperatursving under AC-drift. Opsætningen er grundigt verificeret. Det testede modul består af førstegenerations 10 kV SiC MOSFET- og diode-dies (chipniveau-komponenter), pakket på Aalborg Universitet. En detaljeret indledende baseline-karakterisering er udført for at muliggøre post mortem-fejlanalyse. Under power-cycling måles dies’ ledningsspænding (spændingsfaldet, når komponenten leder) for at overvåge degradering og bruge den som indikator for komponenternes tilstand.
Medium-voltage silicon carbide (SiC) MOSFETs are approaching the maturity needed for practical use and could compete with silicon IGBTs. Because SiC is manufactured differently from silicon and there is limited application experience with its reliability, it is important to study defect growth and failure modes under realistic conditions. A medium-voltage power-cycling test bench was therefore built to expose SiC modules to repeated temperature swings during AC operation, and the setup is thoroughly validated. The tested module uses first-generation 10 kV SiC MOSFET and diode dies (chip-level devices) packaged at Aalborg University. A detailed initial baseline characterization is performed to enable post-mortem fault analysis. During power-cycling, the conduction voltage (the voltage drop when the device conducts) of the SiC dies is measured to monitor degradation and used as a state-of-health indicator.
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