Testing modern Silicon Carbide MOSFET devices against short-circuit

Olascoaga, Pablo Rodriguez de Mora

4. term

Energy Engineering, Master

2017

2017-05-31

Denne afhandling undersøger, hvordan to modeller af Silicon Carbide (SiC) MOSFET-effekttransistorer opfører sig ved kortslutning. Enhederne er mærket til 1,2 kV med strømrating på henholdsvis 36 A og 90 A. For hver model blev flere eksemplarer først målt i statiske tests for at sammenligne grundlæggende parametre. Ud fra hvert sæt blev de transistorer, der havde henholdsvis den højeste og den laveste lækstrøm mellem drain og source (den lille strøm, der kan løbe, når enheden burde være slukket), udvalgt til kortslutningsforsøg. Deres respons blev derefter vurderet ved forskellige DC-link-spændinger (forsyningsspændingen i en effektelektronisk konverter) og ved forskellige kapseltemperaturer (temperaturen på enhedens hus). Studiet beskriver også observerede fejlmåder, det beregnede fald i gate-spænding under kortslutning, den energi, der afsættes under kortslutningen, samt en simuleret overgangstemperatur (temperaturen inde i halvlederchippen).

This thesis examines how two models of Silicon Carbide (SiC) MOSFET power transistors behave under short-circuit conditions. The devices are rated for 1.2 kV, with current ratings of 36 A and 90 A. For each model, several samples were first measured in static tests to compare basic parameters. From each set, the transistors showing the highest and the lowest drain–source leakage current (the small current that can flow when the device is meant to be off) were selected for short-circuit experiments. Their response was then evaluated at different DC-link voltages (the supply voltage in a power converter) and at different case temperatures (the device housing temperature). The study also reports observed failure modes, the calculated drop in gate voltage during a short circuit, the energy dissipated in the short circuit, and a simulated junction temperature (the temperature inside the semiconductor chip).

[This abstract was generated with the help of AI]

SiC Power MOSFET ; Short-Circuit ; Failure ; Drain-source leakage current

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