Testing modern Silicon Carbide MOSFET devices against short-circuit
Term
4. term
Education
Publication year
2017
Submitted on
2017-05-31
Abstract
In this work the short circuit behaviour of two models of Silicon Carbide MOSFETs, rated 1.2 kV 36 and 90 A are analysed. The static characterization of several devices of each model has been performed. Of each model, the devices with highest and lowest drain-source leakage current were selected for short-circuit testing. The behaviour at different DC-link voltage and case temperature has been performed. Additionally, the failure mode, the calculated gate drop, short circuit energy and a simulation of the junction temperature is presented.
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