Smart Derating of Switching Devices for Designing More Reliable PV Inverters
Author
Diaz Reigosa, Paula
Term
4. term
Education
Publication year
2014
Submitted on
2014-06-03
Pages
83
Abstract
Efterhånden som solenergi bliver mere udbredt, forventes solcelleinvertere – enheder der omdanner solpanelers jævnstrøm til den vekselstrøm, som bruges i elnettet – at holde op til 20 år. En afgørende del for både pålidelighed og pris er koblingskomponenterne, især IGBT'er (Insulated Gate Bipolar Transistors), en type effekttransistor, hvis levetid er vanskelig at forudsige og måle. Dette projekt analyserer IGBT'ers pålidelighed ved at medtage langtids-driftsprofiler med solindstråling og udetemperatur samt variationer i relevante parametre. Resultatet er en designprocedure, der kan bruges til at estimere pålideligheden af forskellige IGBT-løsninger til solcelleinvertere med et angivet sikkerhedsniveau. Dermed kan inverterdesignere vælge de mest omkostningseffektive IGBT'er, som opfylder kravene til pålidelighed, og undgå både manglende robusthed og unødvendig overdimensionering.
As solar power expands, photovoltaic (solar) inverters—devices that convert the direct current from panels into the alternating current used by the grid—are expected to last up to 20 years. A key factor in both reliability and cost is the switching hardware, especially IGBTs (Insulated Gate Bipolar Transistors), a type of power transistor whose lifetime is difficult to predict and measure. This project analyzes IGBT reliability by accounting for long-term mission profiles: real patterns of solar irradiance and ambient temperature, along with relevant parameter variations. The outcome is a practical design procedure to estimate the reliability of different IGBT options for photovoltaic inverters with a stated level of confidence. This enables inverter designers to choose the most cost-effective IGBTs that still meet reliability requirements, avoiding both underdesign and unnecessary overdesign.
[This abstract was generated with the help of AI]
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