Performance assessment of a 3L-ANPC based on GaN technology
Author
Valente, Mauro
Term
4. term
Education
Publication year
2018
Submitted on
2018-06-01
Pages
86
Abstract
The demand for compact, high-efficiency power converters for applications such as photovoltaic systems motivates the use of new semiconductor technologies. As silicon devices approach their limits, this thesis investigates a gallium nitride (GaN) based three-level Active Neutral Point Clamped (3L-ANPC) inverter. The objective is to assess performance in both single-phase and three-phase operation, focusing on power losses, the volume impact of passive components (e.g., DC-link capacitors and output filters), and output distortion (THD). The work reviews modulation schemes for three-level operation, and details the hardware design, including thermal management, DC-link sizing for both operating modes, output filter design, and gate driving/commutation loop layout for GaN devices (GS66508T). Switching behavior, common-mode effects, and EMI are also analyzed. Performance is evaluated through circuit simulations and laboratory experiments using a dedicated test rig with cooling and over-current protection. This excerpt does not include quantitative outcomes, but the thesis documents both simulated and experimental observations to benchmark GaN-based 3L-ANPC inverters in terms of efficiency, compactness, and output quality.
Efterspørgslen efter kompakte og højvirkningsgrad strømkonvertere til især solcelleanlæg driver interessen for nye halvlederteknologier. Da silikonenheder nærmer sig deres grænser, undersøger dette speciale en tre-niveaus Active Neutral Point Clamped (3L-ANPC) inverter baseret på GaN-transistorer. Formålet er at vurdere ydeevnen i både en- og trefaset drift med fokus på effekttab, pladsbehov for passive komponenter (fx DC-link kondensatorer og udgangsfiltre) og udgangsforvrængning (THD). Arbejdet omfatter gennemgang af modulationsmetoder for tre-niveaus drift, design af kølesystem, dimensionering af DC-link for begge driftsformer, udformning af udgangsfilter samt gate-driver og koblingssløjfe for GaN-enheder (GS66508T). Der indgår også analyser af koblingsadfærd, fællesmodeforhold og EMI. Vurderingen bygger på både kredsløbssimuleringer og laboratorieforsøg ved brug af en testrig med køling og overstrømsbeskyttelse. Dette uddrag indeholder ingen kvantitative resultater, men specialet dokumenterer simulerede og eksperimentelle observationer for at belyse effektivitet, kompakthed og udgangskvalitet for GaN-baserede 3L-ANPC-invertere.
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Keywords