Laser Reflectometry for Temperature estimation of short-circuited IGBT modules
Author
Jakuza, Paola
Term
4. semester
Education
Publication year
2022
Submitted on
2022-05-30
Pages
83
Abstract
This project repurposes laser reflectometry—normally used to study thin films—to perform thermoreflectance measurements that directly determine the junction temperature of an IGBT module during a short-circuit. An IGBT (insulated-gate bipolar transistor) is a power electronics device used to control high currents. Thermoreflectance is a non-destructive, non-contact method: a laser shines on the device, and the intensity of the reflected light changes with temperature. By linking these light changes to temperature, we can read the device’s junction temperature (the internal temperature at the semiconductor junction). This temperature is a key indicator for evaluating how reliably an IGBT module withstands thermal stress during operation.
Dette projekt bruger laserreflektometri, som normalt anvendes til at studere tynde film, på en ny måde: til at udføre termoreflektansmålinger, der direkte bestemmer junction-temperaturen i et IGBT-modul under kortslutning. Et IGBT (insulated-gate bipolar transistor) er en effekthalvleder, der bruges til at styre store strømme. Termoreflektans er en ikke-destruktiv og berøringsfri metode: en laser belyser komponenten, og intensiteten af det reflekterede lys ændrer sig med temperaturen. Ved at knytte disse lysændringer til temperaturen kan vi aflæse enhedens junction-temperatur (den indre temperatur i halvlederkrydset). Denne temperatur er afgørende for at vurdere, hvor pålideligt et IGBT-modul tåler termisk belastning under drift.
[This apstract has been rewritten with the help of AI based on the project's original abstract]