Testing modern Silicon Carbide MOSFET devices against short-circuit
Student thesis: Master thesis (including HD thesis)
- Pablo Rodriguez de Mora Olascoaga
4. term, Energy Engineering, Master (Master Programme)
In this work the short circuit behaviour of two
models of Silicon Carbide MOSFETs, rated 1.2 kV 36 and 90
A are analysed. The static characterization of several devices of
each model has been performed. Of each model, the devices with
highest and lowest drain-source leakage current were selected for
short-circuit testing. The behaviour at different DC-link voltage
and case temperature has been performed. Additionally, the
failure mode, the calculated gate drop, short circuit energy and a
simulation of the junction temperature is presented.
models of Silicon Carbide MOSFETs, rated 1.2 kV 36 and 90
A are analysed. The static characterization of several devices of
each model has been performed. Of each model, the devices with
highest and lowest drain-source leakage current were selected for
short-circuit testing. The behaviour at different DC-link voltage
and case temperature has been performed. Additionally, the
failure mode, the calculated gate drop, short circuit energy and a
simulation of the junction temperature is presented.
| Specialisation | Power Electronics and Drives |
|---|---|
| Language | English |
| Publication date | 31 May 2017 |