IGBTs are the backbone of modern low, medium and high power converters. For this reason, their reliability is of paramount importance. One of the most sever operational conditions that these encounter is the short circuit failure and during this it has been observed that gate-emitter voltage oscillations occur threatening the robustness of the device.
For studying these oscillations, an IGBT model was created in TCAD FEM environment and its operation under both static and transient behavior was studied. Afterwards, the model was used for simulating the device under short circuit conditions and a sensitivity analysis to the stray elements associated to the device was performed. The conditions for such oscillations to occur have been identified and the effect of each element was studied.