• Morten Rishøj Thomsen
  • Søren Jacob Brun
4. term, Nanotechnology, Master (Master Programme)
The electronic properties of pristine graphene are modeled using a tight-binding approach. Graphene is a semimetal with a linear band structure near the Dirac point of the Brillouin zone. A linearization of the band structure, called the Dirac approximation, is used to set up analytical expressions for several properties. For many electronic applications, it is necessary to introduce a band gap in graphene. A gapped graphene model may be used to introduce a band gap in a purely mathematical way, whereas a graphene antidot lattice (GAL) may be used to introduce a band gap in a realistic structure. Together with the Dirac approximation, the gapped graphene model forms the basis of the model describing these GALs, where the antidot regions are modeled as gapped graphene and the rest of the structure is modeled as pristine graphene. Additionally, the scattering through graphene antidot barriers (GABs) is modeled using a Green's tensor area integral equation method (GTATIEM). We focus on GABs with a hexagonal arrangement of antidots inside the barrier. An investigation of the scalability of the scattering phenomena is used to approximate the scattering caused by large structures.
SpecialisationNanophysics and -materials
LanguageEnglish
Publication date7 Jun 2013
Number of pages93
ID: 77338003