Testing modern Silicon Carbide MOSFET devices against short-circuit
Studenteropgave: Kandidatspeciale og HD afgangsprojekt
- Pablo Rodriguez de Mora Olascoaga
4. semester, Energiteknik, Kandidat (Kandidatuddannelse)
In this work the short circuit behaviour of two
models of Silicon Carbide MOSFETs, rated 1.2 kV 36 and 90
A are analysed. The static characterization of several devices of
each model has been performed. Of each model, the devices with
highest and lowest drain-source leakage current were selected for
short-circuit testing. The behaviour at different DC-link voltage
and case temperature has been performed. Additionally, the
failure mode, the calculated gate drop, short circuit energy and a
simulation of the junction temperature is presented.
models of Silicon Carbide MOSFETs, rated 1.2 kV 36 and 90
A are analysed. The static characterization of several devices of
each model has been performed. Of each model, the devices with
highest and lowest drain-source leakage current were selected for
short-circuit testing. The behaviour at different DC-link voltage
and case temperature has been performed. Additionally, the
failure mode, the calculated gate drop, short circuit energy and a
simulation of the junction temperature is presented.
| Specialiseringsretning | Effektelektronik og elektriske drivsystemer |
|---|---|
| Sprog | Engelsk |
| Udgivelsesdato | 31 maj 2017 |