This thesis presents a PSpice-MATLAB based evolutionary algorithm for automatic extraction of parasitics in SiCMOSFET test circuits. The model presented in this study focuses on extracting parasitic elements from the data acquired from a DPT. The extraction process combines PSO and PS and the objective function uses WT to identify the frequency content as it evolved in time. To evaluate the fitness of the simulation results, the Euclidean distance was employed as a metric. The simulation results was compared to a reference manufacturer model which displayed errors in terms of overshoot and switching energy. Simulation results demonstrate the effectiveness of the algorithm, showcasing significant improvements in overshoot, EMI, and switching energies compared to the reference model. The proposed model aligns well with experimental data, enhances EMI fitting below 30 MHz, and improves switching energy during turn-on and turn-off.