Recent advancement in the area of medium voltage SiC MOSFETs are approaching the maturity level necessary for practical applications and emerging as a potential competitor for Si IGBTs. However since the SiC MOSFET manufacturing process are different from Si production and limited application related experience are available for the reliability of SiC devices. Investigating the defect growth and failure modes in an application relevant environment for SiC are therefore a necessity. A power cycling test-bench for medium voltage has therefore been built to expose SiC Modules to temperature swings during AC operation. The performance of the test-bench is thoroughly verified. The module tested consist of first generation 10 kV SiC MOSFETs and diode dies, packaged at Aalborg University. A detailed infant characterization of the SiC module is performed for post mortem fault behaviour investigation. During power cycling tests the conduction voltages of the SiC dies are measured for monitoring degradation and used as an indicator for state of health.