Paralleling 2.3 kV SiC Power Modules - Identifying Challenges for Equal Load Sharing
Author
Term
4. term
Education
Publication year
2025
Submitted on
2025-05-27
Pages
60
Abstract
The transition from 690 VAC - 1100 VDC to higher voltage levels presents a significant opportunity to reduce current levels, thereby minimizing losses in power converters. This project aims to enhance power density by replacing conventional IGBT technology with silicon carbide (SiC) MOSFET, which offers higher efficiency and thermal performance. While the immature process limits the current capability of SiC MOSFET, paralleling MOSFETs is needed to achieve the necessary current-handling capability. To facilitate this, the project will explore 2.3 kV SiC MOSFET, addressing key challenges of load-sharing, gate-source voltage oscillations, among power modules across different conditions. The proposed research will try to provide techniques on paralleling two and three-power modules to form the basis of knowledge for a down-scaled version of a multi-megawatt wind power system, focusing on improving power density and reliability. Additionally, the study will investigate leakage current in SiC device to ensure low losses.
Keywords
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