Paralleling 2.3 kV SiC Power Modules - Identifying Challenges for Equal Load Sharing
Author
Walawalkar, Narendra Shankar
Term
4. term
Education
Publication year
2025
Submitted on
2025-05-27
Pages
60
Abstract
At gå fra 690 VAC–1100 VDC til højere spændingsniveauer gør det muligt at overføre den samme effekt med mindre strøm, hvilket sænker tabene i strømomformere. Dette projekt undersøger, om man kan øge effekttæthed (mere effekt på mindre plads) ved at erstatte konventionelle IGBT-effekttransistorer med siliciumcarbid (SiC) MOSFET'er, som giver højere virkningsgrad og bedre varmehåndtering. Fordi den nuværende teknologi begrænser strømkapaciteten for enkelte SiC MOSFET'er, er det nødvendigt at forbinde flere enheder parallelt for at opnå den ønskede strøm. Projektet fokuserer på 2,3 kV SiC MOSFET'er og de centrale udfordringer ved parallelkobling: jævn strømfordeling mellem moduler (load-sharing) og dæmpning af gate-source-spændingsoscillationer, som er hurtige, uønskede spændingssving ved komponentens indgang under forskellige driftsforhold. Arbejdet udvikler praktiske metoder til at parallellere to og tre effekmoduler som grundlag for en nedskaleret version af et multi-megawatt vindkraftsystem med fokus på højere effekttæthed og pålidelighed. Derudover undersøger studiet lækstrøm i SiC-enheder for at sikre lave tab.
Raising operating voltage beyond 690 VAC–1100 VDC allows the same power to flow with less current, which reduces losses in power converters. This project explores increasing power density (more power in less space) by replacing conventional IGBT power switches with silicon carbide (SiC) MOSFETs, which offer higher efficiency and better thermal performance. Because the current rating of single SiC MOSFETs is still limited, multiple devices must be connected in parallel to meet the required current. The work focuses on 2.3 kV SiC MOSFETs and key challenges in paralleling: ensuring even load-sharing between modules and suppressing gate-source voltage oscillations—fast, unwanted voltage ringing at the device input—under varying conditions. We develop practical techniques for paralleling two and three power modules to inform a down-scaled prototype of a multi-megawatt wind power system, aiming for higher power density and reliability. In addition, the study investigates leakage current in SiC devices to keep losses low.
[This summary has been rewritten with the help of AI based on the project's original abstract]
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