A master thesis from Aalborg University
Insulation Evaluation in a SiC Power Module via Electric Field Simulation and Partial Discharge Measurement
Author(s)
Term
4. term
Education
Publication year
2020
Submitted on
2020-05-29
Pages
98 pages
Abstract
Silicone carbide (SiC) wide bandgap (WBG) materials are one of the most promising solution to reduce the size and weight of the power semiconductor modules. Such modules are able to tolerate high voltages and currents, temperatures and switching frequencies. One of the high voltage applications (10 kV) that they are envisoned to be widely used in the future is railways. However, the high operating voltage can be an obstacle for using WBG-based power modules. The increased blocking voltage enhances the local electric field that may become large enough to induce partial discharges (PDs) within the SiC module. High PD activity accelerates the ageing of the insulating silicone gel, shortening the lifetime of the whole module dramatically. In this study, the electrical insulation of 1.2 kV SiC MOSFET module has been evaluated. In FEM simulation the highest electric field strength was seen at the interface between the silicone gel and the metalized ceramic. PRPD measurements showed that a surface discharge was likely to occur at this point. Lastly, the electric field control methods in the SiC MOSFET module were proposed.
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