FEM simulation of IGBTs under short circuit operations
Author
Karaventsas, Vasilios Dimitris
Term
4. term
Education
Publication year
2016
Submitted on
2016-09-15
Pages
81
Abstract
IGBT'er (Insulated Gate Bipolar Transistors) er centrale komponenter i strømomformere fra lav til høj effekt, og derfor er deres pålidelighed afgørende. En af de mest kritiske driftssituationer er en kortslutning, hvor der er observeret svingninger i gate-emitter-spændingen (spændingen mellem styrebenet og emitteren), som kan true komponentens robusthed. For at undersøge dette blev der opbygget en detaljeret, fysikbaseret model af en IGBT i et TCAD-miljø baseret på finitte elementer, og både stationær (statisk) og tidsvarierende (transient) opførsel blev analyseret. Modellen blev derefter brugt til at simulere enheden under kortslutningsforhold, og der blev udført en følsomhedsanalyse af de parasitære (stray) elementer, der er knyttet til enheden. Arbejdet identificerer de betingelser, hvorunder disse svingninger opstår, og undersøger, hvordan hvert enkelt element påvirker dem.
Insulated Gate Bipolar Transistors (IGBTs) are key components in power converters from low to high power, so their reliability is critical. One of the most severe operating conditions is a short-circuit event, during which oscillations in the gate-emitter voltage (the voltage between the control gate and the emitter terminals) have been observed that can threaten device robustness. To investigate this, a detailed, physics-based IGBT model was built in a TCAD finite-element simulation environment, and both steady-state (static) and time-varying (transient) behavior were examined. The model was then used to simulate the device under short-circuit conditions and to perform a sensitivity analysis of the parasitic (stray) elements associated with the device. The study identifies the conditions under which these oscillations occur and examines how each element influences them.
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